Product Summary

  • The fll120 is a L-Band Medium & High Power GaAs FET. The fll120mk is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Parametrics

fll120 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 37.5℃; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.

Features

fll120mk features: (1)High Output Power: P1dB = 40.0dBm (Typ.); (2)High Gain: G1dB = 10.0dB (Typ.); (3)High PAE: ηadd = 40% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.

Diagrams

fll120mk block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FLL1200IU-2
FLL1200IU-2

Other


Data Sheet

Negotiable 
FLL1200IU-3
FLL1200IU-3

Other


Data Sheet

Negotiable