(China (Mainland))
Product Summary
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
Parametrics
High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band
Features
High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band
Diagrams
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RD15HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
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 RD15HVF1 |
Other |
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Data Sheet |
Negotiable |
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