(China (Mainland))
Product Summary
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications
Parametrics
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
Features
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
Diagrams
For output stage of high power amplifiers in VHF band Mobile radio sets.
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Pricing (USD) |
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 RD30HVF1 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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RD30ESAB |
Other |
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Data Sheet |
Negotiable |
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RD30ESAB1 |
Other |
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Data Sheet |
Negotiable |
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RD30ESAB2 |
Other |
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Data Sheet |
Negotiable |
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RD30ESAB3 |
Other |
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Data Sheet |
Negotiable |
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RD30ESAB4 |
Other |
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Data Sheet |
Negotiable |
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RD30FB |
Other |
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Data Sheet |
Negotiable |
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