(China (Mainland))
Product Summary
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Parametrics
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
Features
For output stage of high power amplifiers in VHF band mobile radio sets.
Diagrams
RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
This product include the lead in high melting temperature type solders.
However,it is applicable to the following exceptions of RoHS Directions.
Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
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 RD06HVF1 |
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Data Sheet |
Negotiable |
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RD06HHF1 |
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Negotiable |
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RD06HVF1 |
Other |
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Data Sheet |
Negotiable |
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